【公开课】普渡大学 - 晶体管基础(双字,Fundamentals of Transistors,PurdueX)

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2020-02-29 19:54:42
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https://www.edx.org/course/fundamentals-of-transistors 普渡大学 - 晶体管基础(双字,Fundamentals of Transistors,PurdueX) 本课程为了解晶体管(包括现代纳米级晶体管)的基本物理原理提供了一个简单的框架。 还讨论了重要的技术考虑因素和电路应用。 中文:双字 英语(美国):仅英文
www.bilibili.com/read/cv9038294 关于“微电子与纳电子学”的使用说明及版权声明
视频选集
(3/38)
How to Take This Course Video
13:12
L1.1 The MOSFET as a Black Box
18:45
L1.2 Digital Circuits
22:11
L1.3 Analog、RF Circuits
22:52
L1.4 MOSFET Device Metrics
20:06
L1.5 Compact Models
17:19
L1.6 Unit 1 Recap
15:05
L2.1 Energy Band Diagram Review
16:38
L2.2 Energy Band View of the MOSFET
18:36
L2.3 MOSFET IV Theory
24:57
L2.4 The Square Law MOSFET
16:48
L2.5 The Virtual Source Model
20:50
L2.6 Unit 2 Recap
13:05
L3.1 Energy Band Diagram Approach
19:17
L3.2 The Depletion Approximation
15:05
L3.3 Gate Voltage and Surface Potential
23:04
L3.4 Flat-band Voltage
19:00
L3.5 MOS CV
15:31
L3.6 Lecture Video
23:36
L3.7 The Mobile Charge vs. Gate Voltage
28:11
L3.8 2D MOS Electrostatics
20:14
L3.9 The VS Model Revisited
12:21
L3.10 Unit 3 Recap
20:04
L4.1 The Landauer Approach
21:33
L4.2 Landauer at Low and High Bias
19:01
L4.3 The Ballistic MOSFET
22:43
L4.4 Velocity at the Virtual Source
14:46
L4.5 Transmission Theory of the MOSFET
24:53
L4.6 The VS Model Revisited
10:53
L4.7 Analysis of Experiments
18:50
L4.8 Unit 4 Recap
16:12
L5.1 Limits of MOSFETs
19:00
L5.2 Power MOSFETs
21:55
L5.3 High Electron Mobility Transistors (HEMTs)
21:29
L5.4 Review of PN Junctions
17:40
L5.5 Heterostructure Bipolar Transistors (HBTs)
26:13
L5.6 A Second Look at Compact Model Circuits
18:09
L5.7 Unit 5 Recap
20:41
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