【公开课】半导体器件原理I - 香港科技大学 -(英文授课,中英字幕,Principle of Semiconductor Devices Part I)

8万
147
2020-02-29 03:50:13
1004
384
4815
914
https://courses.edx.org/courses/course-v1:HKUSTx+ELEC3500.1x+1T2020/course/ Principle of Semiconductor Devices Part I: Semiconductors, PN Junctions and Bipolar Junction Transistors 半导体器件原理I:半导体、PN结和双极结型晶体管,英文授课,中英字幕 【公开课】半导体器件原理II:av92441163
www.bilibili.com/read/cv9038294 关于“微电子与纳电子学”的使用说明及版权声明
视频选集
(1/83)
1.0 Introduction Video
03:03
1.1 Atomic structure
02:58
1.2 Energy bands
04:09
1.3 Electron excitation
01:10
1.4 Metal, insulator and semiconductor
01:56
1.5 Carrier motion
04:44
1.6 Water analogy for electrons and holes
01:27
2.1 Density of states
02:47
2.2 Fermi-Dirac statistics
04:29
2.3 Calculating carrier density
01:57
2.4 Equivalent density of states
03:17
2.5 Boltzmann approximation
03:38
2.6 Water analogy for the bandgap
03:25
2.7 Summary
00:52
3.1 Doping of silicon
03:07
3.2 Dopant states
03:43
3.3 Carrier density
03:05
3.4 Locating the Fermi level
04:12
3.5 Water Analogy for Fermi Level
01:57
4.1 Doping of the PN junction
05:22
4.2 Band diagram of the PN junction
03:45
4.3 Calculating the depletion region width
05:11
4.4 One-sided PN junction
02:09
4.5 The built-in potential
02:36
5.1 Carrier statistics with respect to locations
03:15
5.2 Carrier motion at thermal equilibrium
02:48
5.3 Fermi-level under external voltage
02:45
5.4 Energy band bending under reverse bias
02:43
5.5 Carrier concentration at reverse bias
02:34
5.6 Diffusion current under reverse bias
03:50
5.7 Reverse bias current of a PN junction
03:00
5.8 Forward bias voltage across the depletion region
02:04
5.9 Forward bias current of a PN junction
04:36
6.1 Mechanism for asymmetric PN junction diode current
02:12
6.2.1 Mechanism for minority carrier current control
02:30
6.2.2 Mechanism for minority carrier current control-answer
00:35
6.3 The majority carrier current
03:21
6.4 Short diode current
03:28
6.5 Carrier recombination in long diode
04:21
7.1 Ideal diode current in log scale
03:23
7.2 Recombination current in the depletion region
02:01
7.3 High level injection
01:26
7.4 Complete PN junction turn-on
01:32
7.5 PN junction breakdown
02:39
7.6 Temperature effects
01:43
7.7 PN junction design
05:07
8.1 Reverse bias junction capacitance
03:12
8.2 Forward bias diffusion capacitance
04:56
8.3 Large signal PN junction model
01:53
8.4 Small signal PN junction model
01:06
8.5 PN junction diode parameter extraction
02:33
9.1 Optical properties of semiconductors
04:58
9.2 Photo detectors
01:20
9.3 Solar cells
03:38
9.4 Solar cell materials
03:09
9.5 Solar cell design
02:14
9.6 Light Emitting Diodes (LEDs)
05:56
10.1 Work function of a material
05:55
10.2 Formation of a Schottky contact
03:58
10.3 Band diagram of a Schottky contact at thermal equilibrium
03:24
10.4 Carrier motion of a Schottky contact at thermal equilibrium
05:41
10.5 Schottky diode current-voltage characteristics
03:33
10.6 Schottky versus PN junction diodes
02:03
10.7 Ohmic metal-semiconductor contacts
04:23
11.1 Formation of the Bipolar Junction Transistor (BJT)
04:23
11.2 Basic operation principles
04:59
11.3 Current components
05:15
11.4 Current-voltage characteristics in the forward active mode
04:24
11.5 Emitter and base design of the BJT
05:28
12.1 Reverse active、cutoff、saturation modes
03:59
12.2 Current-voltage characteristics in the saturation mode
05:52
12.3 The Early effect
06:39
12.4 Base punchthrough
02:39
12.5 BJT breakdown
05:59
13.1 Physical BJT design
06:03
13.2 Lateral BJT
02:36
13.3 Turn-on transient
05:15
13.4 Turn-off transient
03:05
13.5 Schottky BJT
04:05
14.1 The Ebers-Moll model
04:29
14.2 The small signal model
08:10
14.3 Frequency response
05:30
14.4 Structural optimization
02:35
客服
顶部
赛事库 课堂 2021拜年纪